금속 표면 상의 헤테로사이클릭 패시베이션 막의 선택적 증착

• Main Authors: YONG DOREEN WEI YING, SUDIJONO JOHN, WANG YONG, BHUYAN BHASKAR JYOTI
• Format: Patent
• Language: Korean
• Published: 10.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

선택적 증착 방법들이 기술된다. 패시베이션 막(passivation film)이 유전체 재료의 증착 전에 금속 표면 상에 증착된다. 방법들은 금속 표면 및 유전체 표면을 포함하는 기판을 프로세싱 챔버에서 헤드기(head group) 및 테일기(tailgroup)를 포함하는 헤테로사이클릭 반응물에 노출시키는 단계 및 금속 표면 상에 헤테로사이클릭 반응물을 선택적으로 증착시켜 패시베이션 층을 형성하는 단계를 포함하며, 헤테로사이클릭 헤드기는 상기 금속 표면과 선택적으로 반응하고 결합한다. Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.