METHOD FOR GRINDING A WAFER

When grinding a wafer, a grinding time is shortened and the damage layer of the wafer after grinding is reduced. A method for grinding a wafer includes: a step of holding a wafer on the holding surface of a chuck table; a first grinding step of grinding the wafer to a thickness that does not reach a...

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Bibliographic Details
Main Authors NAKAYAMA HIDEKAZU, KUBO TETSUO
Format Patent
LanguageEnglish
Korean
Published 09.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:When grinding a wafer, a grinding time is shortened and the damage layer of the wafer after grinding is reduced. A method for grinding a wafer includes: a step of holding a wafer on the holding surface of a chuck table; a first grinding step of grinding the wafer to a thickness that does not reach a predetermined finished thickness of the wafer by controlling a grinding transfer tool by a control part so as to apply strength to a load value measured by a load measuring unit; after the first grinding step, a second grinding step of applying a preset load value and grinding the wafer with a grindstone until it reaches a predetermined finished thickness. [과제] 웨이퍼를 연삭하는 경우에, 연삭 시간을 짧게 하고, 또한 연삭 후의 웨이퍼의 데미지층을 작게 한다. [해결 수단] 웨이퍼의 연삭 방법은, 척 테이블의 유지면에 웨이퍼를 유지시키는 공정과, 하중 측정 유닛이 측정한 하중값에 강약을 부여하도록 연삭 이송 기구를 제어 유닛에 의해 제어하여 웨이퍼의 소정의 마무리 두께에 이르지 않는 두께로 웨이퍼를 연삭하는 제 1 연삭 공정과, 제 1 연삭 공정 후, 미리 설정한 설정 하중값을 부여하여 웨이퍼를 소정의 마무리 두께가 될 때까지 연삭 지석으로 연삭하는 제 2 연삭 공정을 포함한다.
Bibliography:Application Number: KR20210129131