SEMICONDUCTOR DEVICE

A semiconductor device (1) includes a p-type region (14) including superlattice pseudo mixed crystal regions (14a,14b) in which a first layer (14a) and a second layer (14b) are alternately stacked. The first layer includes a gallium oxide-based semiconductor. The second layer includes a p-type semic...

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Bibliographic Details
Main Author MIYAKE HIROKI
Format Patent
LanguageEnglish
Korean
Published 18.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device (1) includes a p-type region (14) including superlattice pseudo mixed crystal regions (14a,14b) in which a first layer (14a) and a second layer (14b) are alternately stacked. The first layer includes a gallium oxide-based semiconductor. The second layer includes a p-type semiconductor made of a material different from that of the first layer. 반도체 장치(1)는 제1 층(14a) 및 제2 층(14b)이 교호식으로 적층되어 있는 초격자 의사 혼정 영역(14a, 14b)을 포함하는 p형 영역(14)을 포함한다. 제1 층은 산화갈륨계 반도체를 포함한다. 제2 층은 제1 층과는 상이한 재료로 구성되는 p형 반도체를 포함한다.
Bibliography:Application Number: KR20210132071