quantum dot having growth layer and method for preparing thereof

The preparation method of a quantum dot according to the present invention comprises: a seed-forming step of making a group III element precursor react with a group V element precursor to form a seed until nucleation reaches an inflection point; and a growth layer-forming step of adding a group III...

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Bibliographic Details
Main Authors SHIN JONG MOON, LEE CHANG MIN, PARK YUN HEE, CHOI YONG HOON, PARK JONG NAM, LEE HYUNG DONG, KIM KANG YONG
Format Patent
LanguageEnglish
Korean
Published 15.04.2022
Subjects
ADHESIVES
CHEMISTRY
DYES
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NANOTECHNOLOGY
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:The preparation method of a quantum dot according to the present invention comprises: a seed-forming step of making a group III element precursor react with a group V element precursor to form a seed until nucleation reaches an inflection point; and a growth layer-forming step of adding a group III element-group V element complex solution or a group III element-additional metal-group V element complex solution after the seed forming step to form a growth layer on a seed surface. 본 발명에 따른 양자점의 제조방법은, Ⅲ족원소 전구체 및 Ⅴ족원소 전구체를 반응시켜 핵화(nucleation)가 변곡점에 도달한 시점까지 시드를 형성하는 시드형성단계; 및 상기 시드형성단계 후 Ⅲ족원소-Ⅴ족원소 복합용액 또는 Ⅲ족원소-추가금속-Ⅴ족원소 복합용액을 투입하여 상기 시드 표면에 성장층을 형성시키는 성장층형성단계;를 포함하는 것을 특징으로 한다.
Bibliography:Application Number: KR20200130594