Deposition method and an apparatus for depositing a silicon-containing material

• Main Authors: LIU ZECHENG, TYNELL TOMMI PAAVO, XU YU, PORE VILJAMI, RUOHO MIKKO
• Format: Patent
• Language: English; Korean
• Published: 13.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for depositing a silicon-containing material on a substrate comprising a gap. The method of the present invention includes a step of providing a substrate within a reaction chamber, depositing a carbon-containing suppression layer on the substrate, and depositing a silicon-containing material on the substrate. The step of depositing the suppression layer forms a suppression layer on the substrate by supplying a carbon precursor containing carbon into the reaction chamber and supplying a first plasma into the reaction chamber to form first reactive species from the carbon precursor. The suppression layer is preferably deposited adjacent to the top of the gap. The present invention also relates to a method for forming a structure, a method for manufacturing a device, and a semiconductor processing device. 본 발명은 갭을 포함하는 기판 상에 실리콘 함유 물질을 증착하는 방법에 관한 것이다. 본 발명의 방법은 반응 챔버 내에 기판을 제공하고 기판 상에 탄소를 포함하는 억제층을 증착하고 기판 상에 실리콘 함유 물질을 증착하는 단계를 포함한다. 억제층을 증착하는 단계는 반응 챔버 내에 탄소를 함유하는 탄소 전구체를 공급하고 반응 챔버 내에 제1 플라즈마를 공급하여 탄소 전구체로부터 제1 반응 종들을 형성하여 기판 상에 억제층을 형성한다. 억제층은 바람직하게는 상기 갭의 상부에 인접하여 증착된다. 본 발명은 또한 구조체를 형성하는 방법, 디바이스를 제조하는 방법 및 반도체 공정 장치에도 관련된다.