CMP COMPOSITION FOR TUNGSTEN CMP

• Main Authors: WARD WILLIAM, GRUMBINE STEVEN, WHITENER GLENN, DYSARD JEFFREY, FU LIN
• Format: Patent
• Language: English; Korean
• Published: 04.04.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; THEIR RELEVANT APPARATUS; TRANSPORTING

텅스텐 층을 갖는 기판을 연마하기 위한 화학적 기계적 연마 조성물은 수계 액체 담체, 액체 담체에 분산되어 있고 적어도 6 mV의 영구 양전하를 갖는 콜로이드성 실리카 마모제, 액체 담체 중의 용액으로의 아민 함유 중합체, 및 철 함유 촉진제를 포함한다. 텅스텐 층을 포함하는 기판의 화학적 기계적 연마 방법은 기판을 상기에 기재된 연마 조성물과 접촉시키고, 연마 조성물을 기판에 대하여 상대적으로 움직이게 하고, 기판을 마모시켜 기판으로터 텅스텐의 일부를 제거함으로써 기판을 연마하는 것을 포함한다. A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.