LOW LEAKAGE THIN FILM CAPACITORS USING TITANIUM OXIDE DIELECTRIC WITH CONDUCTING NOBLE METAL OXIDE ELECTRODES

Disclosed are low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems and methods for fabrication. The thin film capacitors include a titanium dioxide dielectric and one or more noble metal oxide electrodes. The thin film capacitors are suitable for high...

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Bibliographic Details
Main Authors TUNG ICHENG, SOUNART THOMAS, ALEKSOV ALEKSANDAR, OGUZ KAAN, BRAUNISCH HENNING, PRABHU GAUNKAR NEELAM
Format Patent
LanguageEnglish
Korean
Published 01.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRICITY
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Summary:Disclosed are low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems and methods for fabrication. The thin film capacitors include a titanium dioxide dielectric and one or more noble metal oxide electrodes. The thin film capacitors are suitable for high voltage application and provide low current density leakage. 디커플링을 위한 저누설 박막 커패시터, 전력 전달, 집적 회로, 관련 시스템 및 제조 방법이 개시된다. 그러한 박막 커패시터는 티타늄 이산화물 유전체 및 하나 이상의 귀금속 산화물 전극을 포함한다. 그러한 박막 커패시터는 고전압 응용에 적합하고 저 전류 밀도 누설을 제공한다.
Bibliography:Application Number: KR20210111679