EPI MULTI ZONE SPOT HEATING IN EPI

• Main Authors: YE ZHIYUAN, CHU SCHUBERT S, ZHU ZUOMING, MYO NYI O, LAU SHU KWAN, SANCHEZ ERROL ANTONIO C, NAKANISHI KOJI, RANISH JOSEPH M, NAKAGAWA TOSHIYUKI
• Format: Patent
• Language: English; Korean
• Published: 30.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; WELDING; WORKING BY LASER BEAM

본 개시내용의 실시예들은 일반적으로, 반도체 프로세싱을 위한 장치 및 방법들에 관한 것으로, 더 구체적으로, 열 프로세싱 챔버에 관한 것이다. 열 프로세스 챔버는 기판 지지부, 기판 지지부 위 또는 아래에 배치된 제1 복수의 가열 엘리먼트들, 및 기판 지지부 위에 배치된 스폿 가열 모듈을 포함한다. 스폿 가열 모듈은 프로세싱 동안 기판 지지부 상에 배치된 기판 상의 저온 영역들의 국부적인 가열을 제공하기 위해 활용된다. 기판의 국부적인 가열은 온도 프로파일을 개선하고, 이는 결과적으로, 증착 균일성을 개선한다. Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.