FILM FORMING METHOD

• Main Authors: KARAKAWA TAKAYUKI, OGAWA JUN
• Format: Patent
• Language: English; Korean
• Published: 23.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a technique capable of controlling embedding characteristics when embedding a film in a recess pattern. A film forming method according to an aspect of the present invention is a film forming method for embedding an SiN film into a recess pattern formed on a surface of a substrate. The film forming method includes the steps of: (a) activating and supplying a first process gas containing NH_3 onto the surface of the substrate and adsorbing an NH_x group (x is 1 or 2) to the surface of the substrate; (b) supplying a silicon containing gas onto the surface of the substrate to which the NH_x group is adsorbed, and adsorbing the silicon containing gas to the NH_x group; and (c) activating and supplying a second process gas containing N_2 to the surface of the substrate to which the NH_x group is adsorbed, and substituting a part of the NH_x group with an N group. The step (a) and the step (b) are repeated and each time the step (a) and the step (b) are repeated at predetermined times, the step (c) is implemented. 오목한 패턴에 막을 매립할 때의 매립 특성을 제어할 수 있는 기술을 제공한다. 본 개시의 일 양태에 의한 성막 방법은, 기판의 표면에 형성된 오목한 패턴 내에 SiN막을 매립하는 성막 방법이며, (a) 상기 기판의 표면에 NH3을 포함하는 제1 처리 가스를 활성화하여 공급하고, 상기 기판의 표면에 NHx기(x는 1 또는 2)를 흡착시키는 공정과, (b) 실리콘 함유 가스를 상기 NHx기가 흡착된 상기 기판의 표면에 공급하고, 상기 NHx기에 흡착시키는 공정과, (c) 상기 NHx기가 흡착된 상기 기판의 표면에 N2를 포함하는 제2 처리 가스를 활성화하여 공급하고, 상기 NHx기의 일부를 N기로 치환하는 공정을 갖고, 상기 공정 (a) 및 상기 공정 (b)를 반복하고, 상기 공정 (a) 및 상기 공정 (b)를 미리 정한 횟수 반복할 때마다 상기 공정 (c)를 행한다.