내식성 부재

• Main Authors: OKUBO MASAHIRO, YOSHIMURA MASAYUKI, NAKAMURA SAEKO, TANAKA TEPPEI, MIYAISHI SO, SAKANE WATARU, YAMAKI SAORI
• Format: Patent
• Language: Korean
• Published: 21.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

열이력을 받아도 내식성 피막이 기재로부터 박리되기 어려운 내식성 부재를 제공한다. 내식성 부재는 금속제의 기재(10)와, 기재(10)의 표면에 형성된 내식성 피막(30)을 구비한다. 내식성 피막(30)은 기재(10)측으로부터 불화마그네슘을 함유하는 불화마그네슘층(31)과, 불화알루미늄을 함유하는 불화알루미늄층(32)이 적층된 것이다. 불화알루미늄층(32)은 불화마그네슘층(31)측으로부터 함유하는 불화알루미늄이 결정질인 제 1 결정질층(32A)과, 함유하는 불화알루미늄이 비정질인 비정질층(32B)과, 함유하는 불화알루미늄이 결정질인 제 2 결정질층(32C)이 적층된 것이다. 제 1 결정질층(32A)과 제 2 결정질층(32C)은 전자선 회절상에 회절 스폿이 관찰되는 층이며, 비정질층(32B)은 전자선 회절상에 헤일로 패턴이 관찰되는 층이다. There is provided a corrosion-resistant member in which a corrosion-resistant coating is difficult to peel off from a base material even when subjected to a thermal history. A corrosion-resistant member includes: a metal base material (10); and a corrosion-resistant coating (30) formed on the surface of the base material (10) . The corrosion-resistant coating (30) is a stack of a magnesium fluoride layer (31) containing magnesium fluoride and an aluminum fluoride layer (32) containing aluminum fluoride in order from the base material (10) side. The aluminum fluoride layer (32) is a stack of a first crystalline layer (32A) containing crystalline aluminum fluoride, an amorphous layer (32B) containing amorphous aluminum fluoride, and a second crystalline layer (32C) containing crystalline aluminum fluoride in order from the magnesium fluoride layer (31) side. The first crystalline layer (32A) and the second crystalline layer (32C) are layers in which diffraction spots are observed in electron beam diffraction images obtained by electron beam irradiation and the amorphous layer (32B) is a layer in which a halo pattern is observed in an electron beam diffraction image obtained by electron beam irradiation.