PATTERN ENHANCEMENT USING A GAS CLUSTER ION BEAM

A method for processing a substrate comprises loading a substrate onto a substrate holder. The substrate includes a major surface and shape part disposed over the major surface. The shape part has a first width along the etching direction. The method comprises: a step of exposing a portion of the ma...

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Main Authors DOBASHI KAZUYA, NISHINO MASARU, NEGROTTI JERRY, CONSOLI PAUL, OYAMA KENICHI, GWINN MATTHEW, OKABE NORIAKI, KOSAKA REO, KAMBARA HIROMITSU, FERNANDEZ LUIS, NATORI SAKURAKO
Format Patent
LanguageEnglish
Korean
Published 18.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for processing a substrate comprises loading a substrate onto a substrate holder. The substrate includes a major surface and shape part disposed over the major surface. The shape part has a first width along the etching direction. The method comprises: a step of exposing a portion of the major surface; and a step of changing the first width of the shape part to a second width along an etching direction by etching a first portion of a sidewall of the shape part using a gas cluster ion beam directed along a beam direction. 기판을 처리하는 방법은, 기판 홀더 상에 기판을 로딩하는 단계를 포함한다. 기판은, 주표면, 및 주표면 위에 배치된 형상부를 포함한다. 형상부는, 에칭 방향을 따라 제1 폭을 갖는다. 방법은, 주표면의 부분을 노출시키는 단계, 및 빔 방향을 따라 지향되는 가스 클러스터 이온 빔을 사용하여, 형상부의 측벽의 제1 부분을 에칭함으로써, 형상부의 제1 폭을 에칭 방향을 따라 제2 폭으로 변화시키는 단계를 포함한다.
Bibliography:Application Number: KR20210120913