옥시할라이드 전구체

• Main Authors: ERMERT DAVID M, WRIGHT JR. ROBERT, BAUM THOMAS H, HENDRIX BRYAN C
• Format: Patent
• Language: Korean
• Published: 15.03.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 마이크로전자 장치의 다양한 표면 상에 몰리브데넘 및 텅스텐 함유 막의 증착에 유용한 몰리브데넘 및 텅스텐 옥시할라이드 화합물의 제조 방법을 제공한다. 본 발명의 방법에서, 몰리브데넘 또는 텅스텐 트리옥시드는 고체 상태 매질 또는 알칼리 및/또는 알칼리 토금속 염을 포함하는 공융 블렌드를 포함하는 용융 상 반응에서 가열된다. 이렇게 형성된 몰리브데넘 또는 텅스텐 옥시할라이드는 증기로서 단리되고 결정화되어 MoO2Cl2와 같은 고순도 전구체 화합물을 제공할 수 있다. The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.