Method for forming carbon layer and method for forming interconnect structure

Disclosed are a method for forming a carbon layer and a method for forming an interconnect structure. The disclosed method for forming the carbon layer comprises: a step of providing a substrate including first and second material layers; a step of forming a surface treatment layer on at least one o...

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Bibliographic Details
Main Authors SHIN, KEUN WOOK, SHIN, HYEON JIN
Format Patent
LanguageEnglish
Korean
Published 08.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are a method for forming a carbon layer and a method for forming an interconnect structure. The disclosed method for forming the carbon layer comprises: a step of providing a substrate including first and second material layers; a step of forming a surface treatment layer on at least one of the first and second material layers; and a step of selectively forming a carbon layer having an sp^2 bonding structure on any one of the first and second material layers. 탄소층의 형성방법 및 인터커넥트 구조체의 형성방법이 개시된다. 개시된 탄소층의 형성방법은 제1 및 제2 물질층을 포함하는 기판을 마련하는 단계; 상기 제1 및 제2 물질층 중 적어도 하나에 표면 처리층을 형성하는 단계; 및 상기 제1 및 제2 물질층 중 어느 하나에 sp2 결합 구조를 가지는 탄소층을 선택적으로 형성하는 단계;를 포함한다.
Bibliography:Application Number: KR20200110588