METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS

A silicon film is appropriately crystallized and enlarged. A substrate processing method is a method in which a silicon film is crystallized and expanded by heat processing. The method comprises: a holding and supporting process holding and supporting a substrate on which the silicon film is formed...

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Main Authors MATSUBARA YOSHIHISA, YONEZAWA SYUHEI, KAGAWA KOJI, SEKIGUCHI KENJI, TAKEZAWA YOSHIHIRO, SUZUKI DAISUKE
Format Patent
LanguageEnglish
Korean
Published 08.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon film is appropriately crystallized and enlarged. A substrate processing method is a method in which a silicon film is crystallized and expanded by heat processing. The method comprises: a holding and supporting process holding and supporting a substrate on which the silicon film is formed before performing heat treatment; and an attachment process attaching a metal to the surface of the silicon film with an attachment amount within a range of 1.0E10 [atoms/cm^2] or more and 1.0E20 [atoms/cm^2] or less by supplying a solution containing a metal to the held and supported process in the holding and supporting process. 실리콘막을 적절하게 결정화 및 확대시킨다. 기판 처리 방법은, 실리콘막을 열처리에 의해 결정화 및 확대시키는 기판 처리 방법이며, 열처리를 행하기 전에, 실리콘막이 형성된 기판을 보유 지지하는 보유 지지 공정과, 보유 지지 공정에 있어서 보유 지지된 기판에 대하여 금속을 포함하는 용액을 공급함으로써, 실리콘막의 표면에 1.0E10[atoms/㎠] 이상 1.0E20[atoms/㎠] 이하의 범위 내의 부착량으로 금속을 부착시키는 부착 공정을 포함한다.
Bibliography:Application Number: KR20210107371