마이크로파 방사로 유전체 막들을 후처리하는 방법들

• Main Authors: MAYUR ABHILASH J, SUN YONG, JHA PRAKET PRAKASH, ADERHOLD WOLFGANG R, LI DONGQING, SEAMONS MARTIN JAY, SHARMA SHASHANK, LIANG JINGMEI
• Format: Patent
• Language: Korean
• Published: 03.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

기판의 표면 상에 형성된 유전체 막을 후처리하는 방법은, 유전체 막이 상부에 형성된 기판을 프로세싱 챔버에 포지셔닝하는 단계, 및 프로세싱 챔버에서 유전체 막을 5 GHz 내지 7 GHz의 주파수의 마이크로파 방사에 노출시키는 단계를 포함한다. A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.