Two way precharge during programming in non-volatile memory device

• Main Authors: PARK SANG SOO, JANG JOON SUC, JOE SUNG MIN, KANG KI HOON, CHOI YONG HYUK
• Format: Patent
• Language: English; Korean
• Published: 08.02.2022
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Disclosed is a non-volatile memory device that performs a bidirectional channel precharge during programming. A program operation of the non-volatile memory device, before programming for a selection memory cell, simultaneously performs a first precharge operation in a bit line direction and a secon...