ORGANOMETALLIC COMPOUNDS PRECURSOR COMPOSITION INCLUDING THE SAME AND PREPARING METHOD OF THIN FILM USING THE SAME

• Main Authors: NIM MIN HYUK, KIM HYO SUK, PARK MIN SUNG, PARK JUNG WOO, SEOK JANG HYEON
• Format: Patent
• Language: English; Korean
• Published: 07.02.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a vapor deposition compound which is capable of thin film deposition through vapor deposition, and more specifically, to an organic metal-containing compound which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent reactivity, volatility, and thermal stability, a precursor composition comprising the organic metal-containing compound, a preparation method of a thin film using the precursor composition, and an organic metal-containing thin film prepared by the precursor composition. 본 발명은 기상 증착을 통하여 박막 증착이 가능한 기상 증착 화합물에 관한 것으로, 구체적으로는 원자층 증착법 (Atomic Layer Deposition, ALD) 또는 화학 기상 증착법 (Chemical Vapor Deposition, CVD)에 적용 가능하고, 반응성, 휘발성 및 열적 안정성이 우수한 유기금속 함유 화합물, 상기 유기금속 화합물을 포함하는 전구체 조성물, 상기 전구체 조성물을 이용한 박막의 제조방법, 및 상기 전구체 조성물로 제조된 유기금속 함유 박막에 관한 것이다.