HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACURING THE SAME

The present invention provides a HEMT device having a low-resistance access region and a method for manufacturing the same. A portion of a substrate and a transition layer under an access region of the HEMT device is etched, and a back protective layer and a back metal electrode are formed in the et...

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Bibliographic Details
Main Authors KIM HAE CHEON, AHN HO KYUN, KANG SOO CHEOL, LIM JONG WON, CHANG SUNG JAE, JUNG HYUN WOOK
Format Patent
LanguageEnglish
Korean
Published 04.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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