HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACURING THE SAME

The present invention provides a HEMT device having a low-resistance access region and a method for manufacturing the same. A portion of a substrate and a transition layer under an access region of the HEMT device is etched, and a back protective layer and a back metal electrode are formed in the et...

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Bibliographic Details
Main Authors KIM HAE CHEON, AHN HO KYUN, KANG SOO CHEOL, LIM JONG WON, CHANG SUNG JAE, JUNG HYUN WOOK
Format Patent
LanguageEnglish
Korean
Published 04.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a HEMT device having a low-resistance access region and a method for manufacturing the same. A portion of a substrate and a transition layer under an access region of the HEMT device is etched, and a back protective layer and a back metal electrode are formed in the etched portion. The resistance of the access region is reduced to improve drain current and transconductance, thereby improving the output characteristics and frequency characteristics of the device by increasing concentration of 2DEG by applying a voltage to the rear metal electrode. In addition, when the HEMT device is in a turn-off state, a voltage is applied to the rear metal electrode to deplete the 2DEG to reduce leakage current and power consumption. 본 발명에서는 저저항 액세스 영역을 갖는 HEMT 소자 및 그 제조 방법이 제공된다. HEMT 소자의 액세스 영역 아래 부분의 기판과 전이층의 일부를 식각하고, 식각된 부분에 후면보호층 및 후면금속전극을 형성한다. 후면금속전극에 전압을 인가하여 2DEG의 농도를 증가시킴으로 인하여 액세스 영역의 저항을 감소시켜, 드레인 전류 및 트랜스컨덕턴스를 향상시키면 소자의 출력 특성 및 주파수 특성을 개선할 수 있다. 또한, HEMT 소자가 turn-off 상태일 경우에는 후면금속전극에 전압을 인가하여 2DEG를 공핍시키면 누설 전류 및 전력 소모량을 줄일 수 있다.
Bibliography:Application Number: KR20200131349