plasma etcher plasma etching method and manufacturing method of semiconductor device including the plasma etching method

An object of the present invention is to provide a plasma etching device, capable of increasing an aspect ratio of a channel hole on a substrate, a plasma etching method, and a method for manufacturing a semiconductor device comprising the same. The etching device is connected to a chamber, an elect...

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Main Authors KIM NAM KYUN, SHIM SEUNGBO, SUNG DOUGYONG, KIM KYUHO, CHOI MYUNGSUN, ANN SUNGJUN
Format Patent
LanguageEnglish
Korean
Published 26.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An object of the present invention is to provide a plasma etching device, capable of increasing an aspect ratio of a channel hole on a substrate, a plasma etching method, and a method for manufacturing a semiconductor device comprising the same. The etching device is connected to a chamber, an electrostatic chuck disposed in a lower portion of the chamber to receive a substrate, and the electrostatic chuck. The device comprises a high-frequency power supply unit for generating plasma in the chamber by providing high-frequency power to the electrostatic chuck, and a controller connected to the high-frequency power supply unit to control the high-frequency power. 본 발명은 플라즈마 식각 장치, 플라즈마 식각 방법 및 상기 플라즈마 식각 방법을 포함하는 반도체 소자의 제조방법을 개시한다. 그의 식각 장치는 챔버과, 상기 챔버의 하부 내에 배치되어 기판을 수납하는 정전 척과 상기 정전 척에 연결되고, 상기 정전 척에 고주파 파워를 제공하여 상기 챔버 내에 플라즈마를 생성시키는 고주파 파워 공급부와, 상기 고주파 파워 공급부에 연결되어 상기 고주파 파워를 제어하는 제어부를 포함한다.
Bibliography:Application Number: KR20200088411