METHOD FOR FORMING A LAYER PROVIDED WITH SILICON

• Main Authors: JONGBLOED BERT, VAN AERDE STEVEN, KNAEPEN WERNER, HOUBEN KELLY, VERWEIJ WILCO, PIERREUX DIETER
• Format: Patent
• Language: English; Korean
• Published: 31.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of forming a layer with silicon is disclosed. The layer can be created by placing a substrate in a processing chamber, heating the substrate to a first temperature between 300 and 500° C, and introducing a first precursor into the processing chamber to deposit a first layer. The substrate can be heated to a second temperature between 400 and 600 °C. A second precursor can be introduced into the processing chamber to deposit a second layer. The first and second precursors can include silicon atoms. The first precursor can have more silicon atoms per molecule than the second precursor. 실리콘으로 층을 형성하는 방법이 개시된다. 층은 프로세싱 챔버 내에 기판을 위치시키고, 기판을 300 내지 500 ℃ 사이의 제 1 온도로 가열하고, 제 1 전구체를 프로세싱 챔버에 도입하여 제 1 층을 증착함으로써 생성될 수 있다. 기판은 400 내지 600 ℃ 사이의 제 2 온도로 가열될 수 있으며; 제 2 전구체가 제 2 층을 증착하기 위해 프로세싱 챔버 내로 도입될 수 있다. 제 1 및 제 2 전구체는 실리콘 원자를 포함할 수 있고, 제 1 전구체는 제 2 전구체보다 분자 당 더 많은 실리콘 원자를 가질 수 있다.