APPARATUS FOR PROCESSING SUBSTRATE

• Main Authors: KIM JEONG KUK, BAE JONG TAE, SA SEUNG YOUB, KIM KI BUM, JANG DAE SOO
• Format: Patent
• Language: English; Korean
• Published: 07.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to one embodiment, a substrate processing device comprises: a chamber providing a reaction space therein; a susceptor provided inside the chamber; and a gas injection unit having a plurality of injection holes which are opened in a polygonal shape and formed on one surface of a plate facing the susceptor. Each of the plurality of injection holes can include a first slope tapered at a first angle and a second slope tapered at a second angle, with respect to a virtual plane which is in parallel to an upper surface of the susceptor. 일 실시 예에 의한 기판처리장치는, 내부에 반응공간을 제공하는 챔버; 상기 챔버의 내부에 구비되는 서셉터; 및 상기 서셉터와 대향하는 플레이트의 일면에 다각 형상으로 개구된 복수의 분사홀을 갖는 가스분사유닛;을 포함하고, 상기 복수의 분사홀 각각은, 상기 서셉터의 상면과 평행한 가상의 평면에 대하여, 제1 각도로 테이퍼진 제1 경사면과 제2 각도로 테이퍼진 제2 경사면을 포함할 수 있다.