3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

A three-dimensional semiconductor memory device is provided. The device comprises: a carbon-containing layer on a substrate; electrode interlayer insulating films and electrode layers alternately stacked on the carbon-containing layer; a cell vertical pattern penetrating at least a portion of the el...

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Bibliographic Details
Main Authors KIM CHAEHO, LEE SANGSOO, LEE WOOSUNG, JEE JUNGGEUN, NAM PHIL OUK
Format Patent
LanguageEnglish
Korean
Published 19.10.2021
Subjects
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