3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
A three-dimensional semiconductor memory device is provided. The device comprises: a carbon-containing layer on a substrate; electrode interlayer insulating films and electrode layers alternately stacked on the carbon-containing layer; a cell vertical pattern penetrating at least a portion of the el...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
19.10.2021
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Subjects | |
Online Access | Get full text |
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