3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

A three-dimensional semiconductor memory device is provided. The device comprises: a carbon-containing layer on a substrate; electrode interlayer insulating films and electrode layers alternately stacked on the carbon-containing layer; a cell vertical pattern penetrating at least a portion of the el...

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Bibliographic Details
Main Authors KIM CHAEHO, LEE SANGSOO, LEE WOOSUNG, JEE JUNGGEUN, NAM PHIL OUK
Format Patent
LanguageEnglish
Korean
Published 19.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A three-dimensional semiconductor memory device is provided. The device comprises: a carbon-containing layer on a substrate; electrode interlayer insulating films and electrode layers alternately stacked on the carbon-containing layer; a cell vertical pattern penetrating at least a portion of the electrode interlayer insulating films and the electrode layers; and a semiconductor pattern interposed between the cell vertical pattern and the carbon-containing layer. The substrate includes first grains, the semiconductor pattern includes second grains, and an average size of the second grains is smaller than an average size of the first grains. 3차원 반도체 메모리 장치가 제공된다. 이 장치는, 기판 상에 탄소함유층; 상기 탄소함유층 상에 교대로 적층되는 전극 층간절연막들과 전극층들; 상기 전극 층간절연막들과 상기 전극층들을 적어도 일부 관통하는 셀 수직 패턴; 및 상기 셀 수직 패턴과 상기 탄소함유층 사이에 개재되는 반도체 패턴을 포함하되, 상기 기판은 제 1 그레인들을 포함하고, 상기 반도체 패턴은 제 2 그레인들을 포함하고, 상기 제 2 그레인들의 평균 크기는 상기 제 1 그레인들의 평균 크기보다 작다.
Bibliography:Application Number: KR20200042500