Metal nanowire and Method of manufacturing thereof

A metal nanowire according to one aspect of the present invention is a metal nanowire which is formed by growth of metal grains under existence of a capping agent. The metal nanowire comprises: metal-poor sections that are sections which include the capping agent and the metal and comprise a first c...

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Bibliographic Details
Main Authors JANG HYUN JI, MAENG IL HO, LEE WOO RAM, PYUN MIN WOOK
Format Patent
LanguageEnglish
Korean
Published 15.10.2021
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Summary:A metal nanowire according to one aspect of the present invention is a metal nanowire which is formed by growth of metal grains under existence of a capping agent. The metal nanowire comprises: metal-poor sections that are sections which include the capping agent and the metal and comprise a first content of the metal and 20 to 90% of the capping agent; and metal-rich sections which are connected with each other by the metal poor sections, wherein the metal is included with a second content, higher than the first content, to be crystalized. 본 발명의 일 측면에 따른 메탈 나노와이어는 캡핑제 존재 하에서 메탈의 결정이 성장하여 형성된 메탈 나노와이어(Metal nanowire)로서, 상기 메탈 나노와이어는, 상기 캡핑제와 상기 메탈을 포함하며, 상기 메탈이 제1함량으로 포함되고, 상기 캡핑제를 20 내지 90%로 포함하는 공간인 메탈-푸어(Metal-poor)구간; 및 상기 메탈이 상기 제1함량보다 높은 제2함량으로 포함되어 상기 결정을 이루고, 상기 메탈-푸어구간에 의해 서로 연결되는 메탈-리치(Metal-rich)구간;을 포함하는 것을 특징으로 한다.
Bibliography:Application Number: KR20210133360