3 METHOD OF MANUFACTURING A III-NITRIDE SEMICONDUCTER DEVICE

The present disclosure relates to a method of fabricating a group III-nitride semiconductor element constituting a device such as a power device (e.g., a transistor, HEMT). The method comprises: a step of growing a group III-nitride semiconductor structure having a channel layer and a barrier layer...

Full description

Saved in:
Bibliographic Details
Main Author JANG TAE JIN
Format Patent
LanguageEnglish
Korean
Published 13.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present disclosure relates to a method of fabricating a group III-nitride semiconductor element constituting a device such as a power device (e.g., a transistor, HEMT). The method comprises: a step of growing a group III-nitride semiconductor structure having a channel layer and a barrier layer on a growth substrate; a step of attaching a temporary substrate through a metal bonding layer to a side of the group III-nitride semiconductor structure opposite to the growth substrate; a step of removing the growth substrate; bonding a heat dissipation substrate to the group III-nitride semiconductor structure on the side from which the growth substrate is removed; and removing the temporary substrate. 본 개시는 3족 질화물 반도체 소자를 제조하는 방법에 있어서, 성장 기판에 채널층과 배리어층을 구비하는 3족 질화물 반도체 구조를 성장시키는 단계; 성장 기판에 대향하는 3족 질화물 반도체 구조 측에 금속 접합층을 통해 임시 기판을 부착하는 단계; 성장 기판을 제거하는 단계; 성장 기판이 제거된 측의 3족 질화물 반도체 구조에 방열 기판을 결합하는 단계; 그리고, 임시 기판을 제거하는 단계;를 포함하는 3족 질화물 반도체 소자를 제조하는 방법에 관한 것이다.
Bibliography:Application Number: KR20200040306