SEMICONDUCTOR DEVICE WITH INTEGRATED CAPACITOR AND MANUFACTURING METHOD THEREOF

A semiconductor structure includes a capacitor comprising a first electrode and a second electrode disposed over the first electrode and electrically insulated from the first electrode. The semiconductor structure also includes a first conductive via extending through the first electrode and contact...

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Bibliographic Details
Main Author CHOU CHUNG YEN
Format Patent
LanguageEnglish
Korean
Published 07.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a capacitor comprising a first electrode and a second electrode disposed over the first electrode and electrically insulated from the first electrode. The semiconductor structure also includes a first conductive via extending through the first electrode and contacting a planar surface of the first electrode. The semiconductor structure further includes a second conductive via extending through the second electrode and contacting a planar surface of the second electrode. 반도체 구조물은, 제1 전극 및 제1 전극 위에 배치되며 제1 전극으로부터 전기적으로 절연된 제2 전극을 포함하는 커패시터를 포함한다. 반도체 구조물은 또한, 제1 전극을 통해 연장하며 제1 전극의 평면 표면에 접촉하는 제1 전도성 비아를 포함한다. 반도체 구조물은, 제2 전극을 통해 연장하며 제2 전극의 평면 표면에 접촉하는 제2 전도성 비아를 더 포함한다.
Bibliography:Application Number: KR20210127037