ION GENERATION DEVICE AND ION GENERATION METHOD

Provided is a device for generating an ion that contributes in improving productivity of an ion implantation process. The device for generating the ion (12) is equipped with: a plasma generation room (78) that generates plasma (P) for extracting ions; and a heating device (90) configured to heat the...

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Bibliographic Details
Main Author ISHIDA YUUJI
Format Patent
LanguageEnglish
Korean
Published 28.09.2021
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Summary:Provided is a device for generating an ion that contributes in improving productivity of an ion implantation process. The device for generating the ion (12) is equipped with: a plasma generation room (78) that generates plasma (P) for extracting ions; and a heating device (90) configured to heat the plasma generation room (78) by irradiating a laser beam (LB) to a member partitioning the plasma generation room (78) or to a member exposed in the plasma generation room (78). The member partitioning the plasma generation room (78) may be an arc chamber (72). The heating device (90) may be configured so that the arc chamber (72) may be irradiated with the laser beam (LB). 이온주입공정의 생산성향상에 기여하는 이온생성장치를 제공한다. 이온생성장치(12)는, 이온을 인출하기 위한 플라즈마(P)를 생성하는 플라즈마생성실(78)과, 플라즈마생성실(78)을 구획하는 부재 또는 플라즈마생성실 내에 노출되는 부재에 레이저광(LB)을 조사하여 플라즈마생성실(78)을 가열하도록 구성되는 가열장치(90)를 구비한다. 플라즈마생성실(78)을 구획하는 부재는, 아크챔버(72)여도 된다. 가열장치(90)는, 아크챔버(72)에 레이저광(LB)을 조사하도록 구성되어도 된다.
Bibliography:Application Number: KR20210035004