METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER WITH WAFER CHUCK HAVING FLUID GUIDING STRUCTURE

• Main Authors: YANG SHENG CHUN, HUANG PO CHIH, CHENG CHIH LUNG, LIANG PO WEI, LIN YI MING, HSIEH CHU HAN
• Format: Patent
• Language: English; Korean
• Published: 03.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of processing a semiconductor wafer is provided. The method includes a step of loading a semiconductor wafer onto the upper surface of a wafer chuck. The method also includes a step of supplying a gaseous material between the upper surface of the semiconductor wafer and the wafer chuck through a first gas inlet and a second gas inlet located below the fan-shaped sector of the upper surface. The method includes a step of supplying a fluid medium to the fluid inlet of the wafer chuck and a step of guiding a fluid medium from the fluid inlet to flow through a plurality of arcuate channels located below the fan-shaped sector of the upper surface. The method also includes a step of supplying a plasma gas over the semiconductor wafer. 반도체 웨이퍼를 처리하는 방법이 제공된다. 방법은 웨이퍼 척의 최상면 상에 반도체 웨이퍼를 로딩하는 단계를 포함한다. 방법은 또한 반도체 웨이퍼와 웨이퍼 척의 최상면 사이에 가스 물질을 최상면의 팬형상 섹터 아래에 위치된 제1 가스 유입구 및 제2 가스 유입구를 통하여 공급하는 단계를 포함한다. 방법은 웨이퍼 척의 유체 유입구에 유체 매질을 공급하는 단계 및 최상면의 팬형상 섹터 아래에 위치된 복수의 원호형상 채널을 통하여 흐르도록 유체 유입구로부터 유체 매질을 안내하는 단계를 포함한다. 또한, 방법은 반도체 웨이퍼 위에 플라즈마 가스를 공급하는 단계를 포함한다.