NITRIDE SEMICONDUCTOR DEVICE WITH IN-SITU ETCHED LAYER AND METHOD OF FABRICATING THE SAME

• Main Authors: KWAK WOO CHUL, MIN DAE HONG, YUN JUN HO
• Format: Patent
• Language: English; Korean
• Published: 13.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A nitride semiconductor device according to an embodiment includes: a first n-type nitride semiconductor layer having an irregular uneven surface; and a second n-type nitride semiconductor layer disposed on the first n-type nitride semiconductor layer to form an interface with the first n-type nitride semiconductor layer. A silicon concentration at the interface is higher than a silicon concentration in the first and second n-type nitride semiconductor layers. An actual dislocation density in the second n-type nitride semiconductor layer is lower than an actual dislocation density in the first n-type nitride semiconductor layer. An object of the present invention is to provide a nitride semiconductor device having a reduced actual dislocation density using an in-situ etching technique. 일 실시예에 따른 질화물 반도체 소자는, 불규칙한 요철 표면을 갖는 제1 n형 질화물 반도체층; 및 상기 제1 n형 질화물 반도체층 상에 배치되어 상기 제1 n형 질화물 반도체층과의 사이에 계면을 형성하는 제2 n형 질화물 반도체층을 포함하되, 상기 계면에서의 실리콘 농도가 상기 제1 및 제2 n형 질화물 반도체층 내의 실리콘 농도보다 높고, 상기 제2 n형 질화물 반도체층 내의 실전위 밀도는 상기 제1 n형 질화물 반도체층 내의 실전위 밀도보다 낮다.