SiC HIGH QUALITY SILICON CARBIDE CRYSTAL AND METHOD FOR GROWING THE SAME

• Main Authors: SEO HAN SEOK, KIM JANG YUL, EUN TAI HEE, CHUN MYONG CHUEL, YEO IM GYU, LEE SEUNG SEOK
• Format: Patent
• Language: English; Korean
• Published: 01.07.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present disclosure relates to a method for growing SiC single crystals which comprises: a step of positioning seeds in a reactor; a first step of raising an internal temperature of the reactor to a growing temperature and reducing an internal pressure of the reactor to a growing pressure; a seco...