SiC HIGH QUALITY SILICON CARBIDE CRYSTAL AND METHOD FOR GROWING THE SAME

• Main Authors: SEO HAN SEOK, KIM JANG YUL, EUN TAI HEE, CHUN MYONG CHUEL, YEO IM GYU, LEE SEUNG SEOK
• Format: Patent
• Language: English; Korean
• Published: 01.07.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present disclosure relates to a method for growing SiC single crystals which comprises: a step of positioning seeds in a reactor; a first step of raising an internal temperature of the reactor to a growing temperature and reducing an internal pressure of the reactor to a growing pressure; a second step of reducing a partial pressure of nitrogen gas with respect to mixed gas of inert gas and the nitrogen gas while maintaining the internal temperature and the internal pressure of the reactor; and a third step of maintaining the temperature and the pressure of the reactor and the partial pressure of the nitrogen gas to grow SiC single crystals, wherein a speed for reducing the partial pressure of the nitrogen gas in the second step is more than 0.002/h to less than 0.05/h. 본 개시는 SiC 단결정 성장 방법에 관한 것으로 종자정을 반응기 내에 위치시키는 단계; 상기 반응기 내부 온도를 성장 온도로 승온시키고, 반응기 내부 압력을 성장 압력까지 감압시키는 제1단계; 상기 반응기의 내부 온도 및 내부 압력은 유지하면서 불활성 가스 및 질소 가스 혼합 가스에 대한 질소가스 분압을 감소시키는 제2단계; 및 상기 반응기의 온도, 압력 및 질소가스 분압을 유지하여 SiC 단결정을 성장시키는 제3단계; 를 포함하고, 상기 제2단계에서 질소가스 분압을 감소시키는 속도는 0.002 초과 0.05/h 미만일 수 있다.