RESIST COMPOSITION METHOD OF FORMING RESIST PATTERN AND ACID DIFFUSION CONTROL AGENT

The present invention relates to a resist composition which generates an acid upon exposure and changes solubility in a developer by the action of the acid, comprising: a base component (A) whose solubility in a developer changes due to the action of an acid; and a compound (D0) represented by the f...

Full description

Saved in:
Bibliographic Details
Main Authors YAMAZAKI HIROTO, TODOROKI SEIJI, MICHIBAYASHI NOBUHIRO, SHIOSAKI MASAHIRO
Format Patent
LanguageEnglish
Korean
Published 29.06.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to a resist composition which generates an acid upon exposure and changes solubility in a developer by the action of the acid, comprising: a base component (A) whose solubility in a developer changes due to the action of an acid; and a compound (D0) represented by the following formula (d0). Rd^01 represents a monovalent organic group, Rd^02 represents a single bond or a divalent linking group, m represents an integer of 1 or more, and M^(m+) represents an m-valent organic cation. Accordingly, the resist composition can provide high sensitivity and excellent lithographic properties such as roughness. 노광에 의해 산을 발생하고, 또한 산의 작용에 의해 현상액에 대한 용해성이 변화하는 레지스트 조성물로서, 산의 작용에 의해 현상액에 대한 용해성이 변화하는 기재 성분 (A) 와, 하기 일반식 (d0) 으로 나타내는 화합물 (D0) 을 함유하는, 레지스트 조성물. Rd01 은, 1 가의 유기기를 나타낸다. Rd02 는, 단결합 또는 2 가의 연결기를 나타낸다. m 은 1 이상의 정수를 나타내고, Mm+ 는 m 가의 유기 카티온을 나타낸다. [화학식 1] TIFFpat00090.tif27104
Bibliography:Application Number: KR20200175378