Method for manufacturing semiconductor device

• Main Authors: CHOI JIYU, CHO YOUNJOUNG, PARK GYU HEE, RYU SEUNG MIN
• Format: Patent
• Language: English; Korean
• Published: 17.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for manufacturing a semiconductor device. More particularly, the present invention relates to a method for manufacturing a semiconductor device comprising: providing a metal precursor on a substrate to form a preliminary film; and providing a reactant and a co-reactant as a nitrogen source on the preliminary film to form a metal nitride film. The co-reactant is an organo-metallic compound. 본 발명은 반도체 소자의 제조 방법에 관한 것으로, 보다 상세하게는, 기판 상에 금속 전구체를 제공하여, 예비막을 형성하는 것; 및 상기 예비막 상에 질소 소스인 반응물 및 공반응물을 제공하여, 금속 질화막을 형성하는 것을 포함한다. 상기 공반응물은 유기 금속 화합물이다.