METHOD OF FORMING SILICON CARBIDE COATING LAYER BY CHEMICAL VAPOR REACTION PROCESS

• Main Authors: LEE HYUNG IK, PARK JONG KYU, LIM BYOUNG JOO, LIM KWANG HYUN, CHO NAM CHOON, LEE JUNG MIN, SIHN IHN CHEOL
• Format: Patent
• Language: English; Korean
• Published: 17.06.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for forming a silicon carbide (SiC) coating layer by a chemical vapor reaction process. An aspect of the present invention provides the method for forming an SiC coating layer by a chemical vapor reaction process, which comprises: a step of placing metallic silicon (Si) powder on an inner floor of a chamber; a step of placing a carbon-containing material inside the chamber so as not to come in contact with the metallic silicon (Si) powder; and a step of raising temperature inside the chamber to 2,000 ℃ to 2,500 ℃ and maintaining a temperature-raised state. 본 발명은 화학 기상 반응 공정에 의한 탄화규소 코팅층의 형성 방법에 관한 것으로, 본 발명의 일 측면은, 챔버 내부 바닥에 금속 실리콘(Si) 분말을 위치시키는 단계; 상기 금속 실리콘(Si) 분말과 접촉되지 않도록, 상기 챔버 내부에 탄소 함유 소재를 위치시키는 단계; 및 상기 챔버 내부의 온도를 2,000 ℃ 내지 2,500 ℃로 승온하고, 승온된 상태를 유지시키는 단계;를 포함하는, 화학 기상 반응 공정에 의한 탄화규소(SiC) 코팅층의 형성방법을 제공한다.