SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: KUMAGAI KAE, HONDA MASANOBU, HISAMATSU TORU
• Format: Patent
• Language: English; Korean
• Published: 24.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention continuously controls the coverage of a film formed on a substrate. A substrate processing method according to the present invention includes a step of a) exposing a substrate having a pattern formed on the surface thereof to the first reactive species to adsorb the first reactive species to the surface of the substrate in a chamber. Further, the substrate processing method includes a step of b) forming a film on the surface of the substrate by exposing the substrate to plasma formed with the second reactive species in the chamber. In addition, the substrate processing method includes a step of c) repeating the processing including the steps a) and b) two or more times by changing the retention amount of the first reactive species at the start of the step b). 본 발명은 기판에 형성하는 막의 커버리지를 연속적으로 제어한다. 본 발명의 기판 처리 방법은, a) 챔버 내에서, 표면에 패턴이 형성된 기판을 제1 반응종에 노출되게 하여, 제1 반응종을 기판의 표면에 흡착시키는 공정을 포함한다. 또한, 기판 처리 방법은, b) 챔버 내에서, 기판을 제2 반응종으로 형성한 플라즈마에 노출되게 하여, 기판의 표면에 막을 형성하는 공정을 포함한다. 또한, 기판 처리 방법은, c) 공정 a)와 공정 b)를 포함하는 처리를, 공정 b)의 시작 시에 있어서의 제1 반응종의 체류량을 바꿔 2회 이상 반복하는 공정을 포함한다.