SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device includes a lower electrode and an upper electrode facing each other with a dielectric film interposed therebetween, and a capacitor including an interface film provid...

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Bibliographic Details
Main Authors KANG JUNGOO, AHN SANGHYUCK, CHO GIHEE, LEE HYUN SUK
Format Patent
LanguageEnglish
Korean
Published 12.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device includes a lower electrode and an upper electrode facing each other with a dielectric film interposed therebetween, and a capacitor including an interface film provided between the upper electrode and the dielectric film. The interface film ncludes a metal oxide, and further includes an additional component that may exist at grain boundaries in the interface film. An object of the present invention is to provide a semiconductor memory device with improved reliability. 본 발명은 반도체 메모리 소자 및 그의 제조 방법에 관한 것으로, 반도체 메모리 소자는 유전막을 사이에 두고 서로 대향하는 하부전극과 상부전극, 그리고 상기 상부전극과 상기 유전막 사이에 제공된 계면막을 포함하는 커패시터를 포함한다. 상기 계면막은 금속산화물을 포함하고, 그리고 상기 계면막 내의 결정립계에 존재 가능한 추가 성분을 더 포함한다.
Bibliography:Application Number: KR20190138567