HARDMASK COMPOSITION HARDMASK LAYER AND METHOD OF FORMING PATTERNS

• Main Authors: YANG SUNYOUNG, PARK YUSHIN, KWON HYO YOUNG, LIM SANGHAK
• Format: Patent
• Language: English; Korean
• Published: 28.04.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

The present invention relates to a hardmask composition comprising a polymer including a structural unit represented by chemical formula 1, a hardmask layer, and a pattern forming method. In the chemical formula 1, the definitions of Ar^1, L^1, and X^1 are the same as described in the specification. 하기 화학식 1로 표현되는 구조 단위를 포함하는 중합체를 포함하는 하드마스크 조성물, 하드마스크 층 및 패턴형성방법에 관한 것이다. [화학식 1] JPEGpat00042.jpg4553 상기 화학식 1에서, Ar1, L1 및 X1의 정의는 명세서에 기재한 바와 같다.