HARDMASK COMPOSITION HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition comprising a polymer including a structural unit represented by chemical formula 1, a hardmask layer, and a pattern forming method. In the chemical formula 1, the definitions of Ar^1, L^1, and X^1 are the same as described in the specification....

Full description

Saved in:
Bibliographic Details
Main Authors YANG SUNYOUNG, PARK YUSHIN, KWON HYO YOUNG, LIM SANGHAK
Format Patent
LanguageEnglish
Korean
Published 28.04.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
THEIR PREPARATION OR CHEMICAL WORKING-UP
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to a hardmask composition comprising a polymer including a structural unit represented by chemical formula 1, a hardmask layer, and a pattern forming method. In the chemical formula 1, the definitions of Ar^1, L^1, and X^1 are the same as described in the specification. 하기 화학식 1로 표현되는 구조 단위를 포함하는 중합체를 포함하는 하드마스크 조성물, 하드마스크 층 및 패턴형성방법에 관한 것이다. [화학식 1] JPEGpat00042.jpg4553 상기 화학식 1에서, Ar1, L1 및 X1의 정의는 명세서에 기재한 바와 같다.
Bibliography:Application Number: KR20190130265