HARDMASK COMPOSITION HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^...

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Bibliographic Details
Main Authors KIM YOUNG KEUN, JUNG HYEONIL, KIM SEUNGHYUN, PARK SANGCHOL, KIM SANGMI
Format Patent
LanguageEnglish
Korean
Published 22.04.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^5 are the same as described in the specification. 하기 화학식 1로 표현되는 구조단위를 포함하는 중합체 및 용매를 포함하는 하드마스크 조성물, 하드마스크 층 및 패턴형성방법에 관한 것이다. [화학식 1] JPEGpat00022.jpg6798 상기 화학식 1에서, A, B 및 R1 내지 R5의 정의는 명세서에 기재한 바와 같다.
Bibliography:Application Number: KR20190127125