METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME

• Main Authors: KIM BOKHEON, SIPPOLA PERTTU, LIU ZECHENG, ZYULKOV IVAN, PIUMI DANIELE, GIVENS MICHAEL, TOMCZAK JOANN, IVANOVA TATIANA, DE ROEST DAVID KURT
• Format: Patent
• Language: English; Korean
• Published: 21.04.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A structure including a photoresist underlayer, and a method of forming a structure including a photoresist underlayer are disclosed. An exemplary method includes a step of forming a photoresist underlayer comprising a metal. Techniques for treating the surface of the photoresist underlayer and/or depositing additional layers overlying the photoresist underlayer are also disclosed. It is possible to provide a structure that can include a relatively thin and uniform photoresist underlayer having etch selectivity, pattern quality, and/or stability. 포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 금속을 포함한 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면을 처리하고/처리하거나 포토레지스트 하부층 위에 놓인 추가 층을 증착하기 위한 기술이 또한 개시된다.