ETCHING LIQUID AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT

Provided is an etchant for selectively etching Si, Ge, and compounds represented by the general formula Si_(1-x)_Ge_x for oxides thereof, wherein x is greater than 0 and less than 1. The etchant contains fluoride and an oxidizing agent, wherein the fluoride contains hexafluorosilicic acid, and has a...

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Bibliographic Details
Main Authors CHUNG MING YEN, CHOU PO TING
Format Patent
LanguageEnglish
Korean
Published 15.04.2021
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:Provided is an etchant for selectively etching Si, Ge, and compounds represented by the general formula Si_(1-x)_Ge_x for oxides thereof, wherein x is greater than 0 and less than 1. The etchant contains fluoride and an oxidizing agent, wherein the fluoride contains hexafluorosilicic acid, and has an etching rate A measured under the following conditions of 10 Å/min or more. According to the following conditions for measurement of A, a blanket substrate having a layer of Si_0.75Ge_0.25 on the surface is immersed in an etching liquid at 25℃, and an etching rate is measured. Si, Ge, 및 이들 산화물에 대해 일반식 Si1-xGex 로 나타내는 화합물 (단, x 는 0 초과 1 미만이다.) 을 선택적으로 에칭 처리하기 위한 에칭액으로서, 불화물과, 산화제를 포함하고, 상기 불화물은, 육불화규산을 포함하고, 이하의 조건으로 측정되는 에칭 레이트 A 가 10 Å／분 이상인, 에칭액. (A 측정 조건) 표면에 Si0.75Ge0.25 의 층을 갖는 블랭킷 기판을 25 ℃ 에서 에칭액에 침지시키고, 에칭 레이트를 측정한다.
Bibliography:Application Number: KR20200125515