SEMICONDUCTOR NANOCRYSTAL PARTICLE METHOD FOR PREPARING SAME AND DEVICE INCLUDING SAME

• Main Authors: KIM, JIN A, JANG, HYO SOOK, HAN, YONG SEOK, JANG, EUN JOO, LEE, JEONG HEE, KIM, TAE HYUNG, WON, YU HO, PARK, KUN SU, KIM, SUNG WOO
• Format: Patent
• Language: English; Korean
• Published: 10.03.2021
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

The present invention relates to a quantum dot, a method of manufacturing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic element including the quantum dot. The quantum dot, which is cadmium-free, includes: a core including a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium; and a shell including a second semiconductor nanocrystal including zinc and at least one of sulfur and selenium, wherein the quantum dot has an average particle diameter of 13 nm or more, an emission peak wavelength in a range of 440 nm to 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than 25 nm. Accordingly, the quantum dot exhibits improved light emitting characteristics. 아연과 셀레늄, 그리고 선택적으로 황 및/또는 텔루리움을 포함하는 제1 반도체 나노결정을 포함하는 코어와, 아연, 그리고 황 및 셀레늄 중 하나 이상을 포함하는 제2 반도체 나노결정을 포함하는 쉘을 포함하는 비카듐계 양자점으로서, 상기 양자점은 13 nm 이상의 평균 입자 직경을 가지고, 440 nm 내지 470 nm 범위에서 발광 피크 파장을 가지며, 발광 파장의 반치폭은 25 nm 미만인 양자점, 이 양자점의 제조 방법, 이 양자점을 포함하는 양자점-폴리머 복합체, 및 이 양자점을 포함하는 전자 소자에 관한 것이다.