DRAM Device Including an Air Gap and a Sealing layer and Method of Fabricating the Same

A DRAM device including an air gap and a sealing layer and a manufacturing method thereof are described. According to embodiments of the present disclosure, the sealing layer may include a first sealing layer formed using a first directional deposition process and a second sealing layer formed using...

Full description

Saved in:
Bibliographic Details
Main Authors PARK KYUNG WOOK, AN HO KYUN, YOO WON SEOK, LEE DA IN, KANG YOON GOO
Format Patent
LanguageEnglish
Korean
Published 10.03.2021
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:A DRAM device including an air gap and a sealing layer and a manufacturing method thereof are described. According to embodiments of the present disclosure, the sealing layer may include a first sealing layer formed using a first directional deposition process and a second sealing layer formed using a second directional deposition process. 에어 갭 및 씰링층을 갖는 디램 소자 및 그 제조 방법이 설명된다. 본 개시의 실시예들에 의한 씰링층은 제1 방향성 증착 공정을 이용하여 형성된 제1 씰링층 및 제2 방향성 증착 공정을 이용하여 형성된 제2 씰링층을 포함할 수 있다.
Bibliography:Application Number: KR20190105873