NONVOLATILE MEMORY DEVICE STORAGE DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY DEVICE

The present invention relates to a nonvolatile memory device. Each memory block of the nonvolatile memory device of the present invention includes first memory cells of a first pillar and second memory cells of a second pillar. When performing program operations based on consecutive addresses in a s...

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Bibliographic Details
Main Authors LEE KANG BIN, LIM BONGSOON, SHIM SANG WON, CHOI YONGHYUK, YU JAE DUK
Format Patent
LanguageEnglish
Korean
Published 09.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention relates to a nonvolatile memory device. Each memory block of the nonvolatile memory device of the present invention includes first memory cells of a first pillar and second memory cells of a second pillar. When performing program operations based on consecutive addresses in a selected memory block among memory blocks, the nonvolatile memory device is configured to sequentially complete first program operations on non-adjacent memory cells which are not adjacent to a boundary between the first pillar and the second pillar among the first and second memory cells and then to complete a second program operation of an adjacent memory cell adjacent to the boundary. 본 발명은 불휘발성 메모리 장치에 관한 것이다. 본 발명의 불휘발성 메모리 장치의 각 메모리 블록은 제1 필라의 제1 메모리 셀들 및 제2 필라의 제2 메모리 셀들을 포함한다. 불휘발성 메모리 장치는 메모리 블록들 중 선택된 메모리 블록에서 연속한 주소들에 기반하여 프로그램 동작들을 수행할 때, 제1 및 제2 메모리 셀들 중에서 제1 필라와 제2 필라의 경계에 인접하지 않은 비인접 메모리 셀들의 제1 프로그램 동작들을 순차적으로 완료한 후에, 경계에 인접한 인접 메모리 셀의 제2 프로그램 동작을 완료하도록 구성된다.
Bibliography:Application Number: KR20190104615