METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUBSTRATE PROCESSING APPARATUS AND PROGRAM

• Main Authors: KOGURA SHINTARO, HARADA KAZUHIRO, MINAMI MASAYOSHI
• Format: Patent
• Language: English; Korean
• Published: 17.02.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention reduces downtime of a substrate processing device to improve productivity. A method for manufacturing a semiconductor device comprises: a process of supplying first process gas to a substrate inside a process container to form a film on the substrate; a process of supplying second process gas into the process container to form a first precoating film of first thickness having a different material from the film inside the process container while the substrate does not exist inside the process container; and a process of supplying third process gas into the process container to form a second precoating film of second thickness thinner than the first thickness having the same material with the film on the first precoating film formed inside the process container while the substrate does not exist inside the process container. 본 발명은, 기판 처리 장치의 다운 타임을 단축하여, 생산성을 향상시킨다. (a) 처리 용기 내의 기판에 대하여 제1 처리 가스를 공급해서 기판 상에 막을 형성하는 공정과, (b) 처리 용기 내에 기판이 존재하지 않는 상태에서, 처리 용기 내에 제2 처리 가스를 공급하여, 처리 용기 내에 상기 막과는 재질이 다른 제1 두께의 제1 프리코팅 막을 형성하는 공정과, (c) 처리 용기 내에 기판이 존재하지 않는 상태에서, 처리 용기 내에 제3 처리 가스를 공급하여, 처리 용기 내에 형성한 제1 프리코팅 막 상에, 상기 막과 재질이 동일한 상기 제1 두께보다도 얇은 제2 두께의 제2 프리코팅 막을 형성하는 공정을 갖는다.