METHOD AND APPARATUS FOR PURGING AND PLASMA SUPPRESSION IN A PROCESS CHAMBER

• Main Authors: BREILING PATRICK, SUBRAMONIUM PRAMOD, O'LOUGHLIN JENNIFER, SHANKAR NAGRAJ, GERBER KEVIN
• Format: Patent
• Language: English; Korean
• Published: 04.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A substrate processing system comprises a shower head which has a head unit and a stem unit and transmits precursor gas into a processing chamber. A baffle comprises a base unit having a larger outer diameter than an outer diameter of the head unit of the shower head. The baffle comprises a dielectric material and is disposed between the head unit of the shower head and an upper surface of the processing chamber. 기판 프로세싱 시스템은 헤드부 및 스템부를 포함하며 프리커서 가스(precursor gas)를 프로세싱 챔버 내로 전달하는 샤워헤드를 포함한다. 베플(baffle)은 상기 샤워헤드의 헤드부의 외경보다 큰 외경을 갖는 베이스부를 갖는다. 상기 베플은 유전체 재료를 포함하며 상기 샤워헤드의 헤드부와 상기 프로세싱 챔버의 상부 표면 간에 배치된다.