적층막 및 Ag 합금 스퍼터링 타깃

• Main Authors: TOSHIMORI YUTO, NONAKA SOHEI
• Format: Patent
• Language: Korean
• Published: 27.01.2021
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; METALLURGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

Ag 합금막 (11) 과 이 Ag 합금막 (11) 의 일방 면 또는 양면에 적층된 투명 도전 산화물막 (12) 을 구비한 적층막 (10) 으로서, Ag 합금막 (11) 은, Ge 를 5.0 원자％ 이상 13.0 원자％ 이하의 범위 내로 함유하고, 잔부가 Ag 및 불가피 불순물로 된 조성으로 되고, Ag 합금막 (11) 의 막두께가 3 nm 이상 10 nm 이하의 범위 내로 되어 있다. A multilayer film (10) which comprises an Ag alloy film (11) and a transparent conductive oxide film (12) that is superposed on one surface or both surfaces of the Ag alloy film (11), and which is configured such that: the Ag alloy film (11) has a composition that contains Ge in an amount within the range of from 5.0% by atom to 13.0% by atom (inclusive), with the balance made up of Ag and unavoidable impurities; and the Ag alloy film (11) has a film thickness within the range of from 3 nm to 10 nm.