금속 오염을 제어하기 위한 챔버의 인-시튜 CVD 및 ALD 코팅

• Main Authors: MALIK SULTAN, NEMANI SRINIVAS D, KHAN ADIB, CLEMONS MAXIMILLIAN, LIANG QIWEI
• Format: Patent
• Language: Korean
• Published: 15.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본원의 시스템들 및 방법들의 실시예들은, ALD 또는 CVD를 통해, 프로세스 챔버의 복수의 내부 구성요소들 상에 인-시튜로 보호 막을 형성하는 것에 관한 것이다. 보호 막으로 코팅되는 내부 구성요소들은 챔버 측벽, 챔버 바닥, 기판 지지 페디스털, 샤워헤드, 및 챔버 최상부를 포함한다. 보호 막은 비정질 Si, 카르보실란, 폴리실리콘, SiC, SiN, SiO2, Al2O3, AlON, HfO2, 또는 Ni3Al를 포함하는 다양한 조성물들로 이루어질 수 있고, 두께가 약 80 nm 내지 약 250 nm로 변화될 수 있다. Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.