SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a semiconductor device with improved reliability, and a manufacturing method thereof. The semiconductor device comprises: a channel structure; insulating structures surrounding the channel structure and stacked to be spaced apart from each other; and a gate electrode...

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Bibliographic Details
Main Authors SEO MOON SIK, CHOI GIL BOK
Format Patent
LanguageEnglish
Korean
Published 21.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a semiconductor device with improved reliability, and a manufacturing method thereof. The semiconductor device comprises: a channel structure; insulating structures surrounding the channel structure and stacked to be spaced apart from each other; and a gate electrode extending between the insulating structures from interlayer insulating layers and surrounding the channel structure. The insulating structures are formed to reduce a fringing capacity and a fringing field between the gate electrode and the channel structure. 본 기술은 반도체 장치 및 그 제조방법을 포함하며, 상기 반도체 장치는 채널구조, 상기 채널구조를 감싸고 서로 이격되어 적층된 절연구조들, 및 상기 층간 절연막들 사이로부터 상기 절연구조들 사이로 연장되고 상기 채널구조를 감싸는 게이트 전극을 포함한다. 상기 절연구조들은 상기 게이트 전극과 상기 채널구조 사이의 프린징 용량 및 프린징 필드를 줄일 수 있도록 형성된다.
Bibliography:Application Number: KR20190068902